Abstract
摘要:隨著半導體製程的微型化與封裝技術 3D 化,製程中的線上量測與檢測技術逐漸浮現前所未有的挑戰,矽穿孔 (Thru-Silicon Vias, TSVs)、切割道 (kerf)、重分佈層(Redistribution Layer, RDL)、微影疊對 (overlay) 以及密佈於晶圓上的數千萬顆微凸塊 (microbumps) 都對量測技術與設備的準確度、重現性、量測速度與後續數據處理分析帶來了前所未有的高度要求。國際半導體量測設備大廠均投入大量資源開發當代以及下一代線上量測設備,在專利上更是全球佈局,企圖全力搶佔市場。台灣半導體產業為國家經濟命脈,其製程能力在全球具有領導地位。但高端線上量測設備等相關的支持技術卻仍然仰賴國外大廠,台灣半導體產業若欲在日趨激烈的全球競爭中保持領先優勢,就必須發展自主量測設備與技術。本計畫針對此一產業需求,接續先前基於影像分析比對 (image based) 的全域量測技術,進一步開發一種基於液晶覆矽 (Liquid Crystal on Silicon, LCoS) 的全域彩色共焦量測技術(spectrum based),結合自行設計之鏡筒透鏡 (tube lens) 與 軸向色散物鏡,不僅對於被測物斜率與粗糙度有更好的適應性,且每一幀平行量測點數高達上千點,總體量測速度超越部分知名大廠,軸向、橫向解析度與重現性更媲美商業化產品水準,為台灣半導體產業建立自主量測技術與設備,深化國內學術界對於相關技術與理論之掌握,同時培育多名碩博士生投入業界帶來更多後續貢獻。 本計畫開發之量測系統預期規格: 1. 量測深度範圍:>= 100 μm 2. 工作距離:>= 10 mm 3. 軸向解析度:< 50 nm 4. 橫向解析度:< 2 μm 5. 重現性(3σ):< 0.5 μm 6. 準確度:< 100 nm 7. 量測速度:~0.34 WPH (300mm wafer)
Abstract: Accompanying with the miniaturization of the semiconductor process and the three-dimensionalization of the packaging technologies, unprecedented challenges have been arising from the in-situ measurement and on-line inspection technologies of the processing procedures. Thru-silicon vias (TSV), kerf, redistribution layer (RDL), overlay, and thousands of millions of microbumps overlaying on silicon wafers have posed unparalleled level of requirements to the accuracy, the repeatability, the measurement speed and the subsequent data processing and analyses to the measurement technologies and facilities. International companies of semiconductor measuring instruments have been investing great amount of resources for the development of the current and the next-generation in-situ micro-structure measuring instruments. The semiconductor industries have held a significant proportion of the economy of Taiwan, and their processing ability stands in the leading position internationally. Nevertheless, most of the supportive technologies of the in-situ measurement equipment are relying on companies abroad. Hence, to keep the leadership in the highly competitive market of semiconductor industries, we will have to develop our own measurement facilities and technologies. This project has been a successor of the former full-field measurement technology based on diffractive image contrast analysis. Based on the urgent requirements on the semiconductor industries, this project will further focus on the development of a full-field chromatic confocal measurement method based on the liquid crystal on silicon (LCoS). With the combination of the self-designed tube lens and the axial chromatic dispersion objective lens, not only the adaptability to the object slope and the roughness can be improved, but the number of points measured in each frame can be increased. The measurement speed to be achieved will be superior to most of the existing renowned companies, and the axial, lateral resolution and the repeatability can be competitive and superior to some commercialized products. Thus the domestic in-situ measurement technologies and equipment for the semiconductor industries can be established and the related technologies with support of the microscopic theories can be developed by the domestic academia, and several students of master and doctor degree can be fostered to bring more dedication to the industries. Here are the expected specification of the developed measurement system to be achieved: 1. Measurement range: >= 100 μm 2. Working distance: >=10 mm 3. Axial resolution: <50 nm 4. Lateral resolution: <200 nm 5. Repeatability(3σ): <50 nm 6. Accuracy: <100 nm 7. Measurement speed: ~0.34 WPH (for a 300mm wafer)
Keyword(s)
液晶覆矽
彩色共焦顯微術
表面形貌量測術
全域式量測
自動化光學檢測
LCoS (Liquid crystal on silicon)
Chromatic confocal microscopy
Surface profilometry
Full-field measurement
AOI (Automated optical inspection)