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Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link | |
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1 | 2007 | Polarization Effects in Semiconductors - From Ab InitioTheory to Device Applications - Chapter II : Lateral and Vertical Charge Transport in Polar Nitride Heterostructures: Applications for HEMTs, Novel Vertical Junction and Sensors | Wu, Yuh-Renn ; Singh, Madhusudan; Singh, Jasprit | ||||
2 | 2021 | Disorder effects in nitride semiconductors: Impact on fundamental and device properties | Weisbuch C; Nakamura S; Wu Y.-R; Speck J.S.; YUH-RENN WU | Frontiers in Optics and Photonics | 1 | 0 |