次世代半導體技術氮化硼薄膜前驅物與原子層沉積製程之開發(1/2)

Project title

次世代半導體技術氮化硼薄膜前驅物與原子層沉積製程之開發(1/2)

Internal ID

編號：111CC-2-01

Principal Investigator

Start Date

May 1, 2022

End Date

April 30, 2023

Organizations

Materials Science and Engineering

Partner Organizations

Southern Taiwan Science Park Bureau, MOST