Atomic layer deposition of sub-10?nm high-K gate dielectrics on top-gated MoS 2 transistors without surface functionalization

Journal

Applied Surface Science

Journal Volume

443

Pages

421-428

Date Issued

2018

Author(s)

Lin Y.-S.

Cheng P.-H.

Huang K.-W.

DOI

10.1016/j.apsusc.2018.02.225

URI

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85043256309&doi=10.1016%2fj.apsusc.2018.02.225&partnerID=40&md5=8399221e9d0d91c0fa48a44324b2e422

https://scholars.lib.ntu.edu.tw/handle/123456789/432407

Publisher

Elsevier B.V.

Type

journal article