High-density one-dimensional well-aligned germanium quantum dots on a nanoridge array
Resource
Applied Physics Letters 93: 083101
Journal
Applied Physics Letters
Journal Volume
93
Journal Issue
8
Date Issued
2008
Author(s)
Chen, Yan-Ru
Kuan, Chieh-Hsiung
Suen, Yuen-Wuu
Peng, Yu-Hwa
Chen, Peng-Shiu
Chao, Cha-Hsin
Liang, Eih-Zhe
Lo, Hung-Chun
Abstract
The selective growth of high-density one-dimensional well-aligned Ge quantum dots (QDs) on the top of nanoridges patterned on Si substrate is reported. The period of ridge array is 150 nm, the width of each ridge is 80 nm, and the depth of the trench is 20 nm. The areal density of QDs is about 5.4× 109 cm-2. Simulations of the chemical potential show that a proper distribution of the surface curvature may give rise to a suitable chemical potential minimum helping positioning the QDs. These ridges can also be used to control the shape and the uniformity of QDs. © 2008 American Institute of Physics.
SDGs
Other Subjects
Chemical potential; Chemicals; Germanium; Optical waveguides; Silicon; Chemical-; High-density; Well-aligned; Semiconductor quantum dots
Type
journal article