In situ atomic layer deposition and synchrotron-radiation photoemission study of Al2O3 on pristine n-GaAs(0 0 1)-4 ? 6 surface

Journal

Microelectronic Engineering

Journal Volume

88

Journal Issue

7

Pages

1101-1104

Date Issued

2011

Author(s)

Chang, Y.H.

Huang, M.L.

Chang, P.

Shen, J.Y.

Chen, B.R.

Hsu, C.L.

Pi, T.W.

Kwo, J.

DOI

10.1016/j.mee.2011.03.064

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443359

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-79958073781&doi=10.1016%2fj.mee.2011.03.064&partnerID=40&md5=405c7cb83013a0e22ce3abebf491c1a3

Type

conference paper