Analysis on the temperature dependent characteristics of SiGe HBTs
Journal
2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
Pages
178-179
Date Issued
2003
Author(s)
Liang, C.-S.
Pei, Z.
Hsu, Y.-M.
Pan, T.-M.
Liu, Y.-H.
Liu, C.W.
Lu, S.C.
Hsieh, W.-Y.
Tsai, M.-J.
Abstract
In this paper, the /spl beta/ of SiGe HBT shows negative temperature dependence could prevent thermal runaway is suitable for the radio frequency, high power applications was demonstrated and modeled. The breakdown voltage of HBT was measured as a function of reciprocal temperature. The current gain (/spl beta/), the base open common-emitter breakdown voltages (BV/sub CEO/) and the collector-base breakdown voltage (BV/sub CBO/) are the three figures to evaluate the performance of SiGe HBT.
SDGs
Type
conference paper