Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
New user? Click here to register.
Have you forgotten your password?
Home
College of Science / 理學院
Physics / 物理學系
Self-aligned inversion n-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs MOSFET with TiN gate and Ga<inf>2</inf>O<inf>3</inf> (Gd<inf>2</inf>O <inf>3</inf>) dielectric
Details
Self-aligned inversion n-channel In0.2Ga0.8As/GaAs MOSFET with TiN gate and Ga2O3 (Gd2O 3) dielectric
Journal
2007 International Semiconductor Device Research Symposium
Date Issued
2007
Author(s)
Chen, C.-P.
Lin, T.-D.
Chang, Y.-C.
MINGHWEI HONG
Kwo, J.R.
DOI
10.1109/ISDRS.2007.4422234
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443432
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-44949102459&doi=10.1109%2fISDRS.2007.4422234&partnerID=40&md5=0e396c14b3ed56fea1225f7d765d6f6d
Type
conference paper
