Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Science / 理學院
Physics / 物理學系
Self-aligned inversion n-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As/GaAs MOSFET with TiN gate and Ga<inf>2</inf>O<inf>3</inf> (Gd<inf>2</inf>O <inf>3</inf>) dielectric
Details
Self-aligned inversion n-channel In0.2Ga0.8As/GaAs MOSFET with TiN gate and Ga2O3 (Gd2O 3) dielectric
Journal
2007 International Semiconductor Device Research Symposium
Date Issued
2007
Author(s)
Chen, C.-P.
Lin, T.-D.
Chang, Y.-C.
MINGHWEI HONG
Kwo, J.R.
DOI
10.1109/ISDRS.2007.4422234
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443432
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-44949102459&doi=10.1109%2fISDRS.2007.4422234&partnerID=40&md5=0e396c14b3ed56fea1225f7d765d6f6d
Type
conference paper
