Generally applicable self-masked dry etching technique for nanotip array fabrication
Journal
Nano Letters
Journal Volume
4
Journal Issue
3
Pages
471-475
Date Issued
2004
Author(s)
Abstract
Well-aligned nanotip arrays were fabricated by electron cyclotron resonance (ECR) plasma process using gas mixtures of silane, methane, argon, and hydrogen. The resultant tips have nanoscale apexes (∼1 nm) with high aspect ratios (∼50), which were achieved by simultaneous SiC nanomask formation and dry etching during ECR plasma process. This technique was applied to a variety of substrates such as silicon, polycrystalline silicon, gallium nitride, gallium phosphide, sapphire, and aluminum, indicating its general applicability. High-resolution transmission electron microscopy and Auger depth profile analyses revealed that the SiC cap, with Si:C ratio of 1:1, exhibited 3C-SiC and 2H-SiC structure on Si and GaP, respectively, with heteroepitaxial relationship. This one-step self-masked dry etching technique enables the fabrication of uniform nanotip arrays on various substrates over large area at low process temperatures, thereby demonstrating a high potential for practical industrial application.
SDGs
Other Subjects
aluminum;argon;crystallin;gallium;gallium nitride;gallium phosphide;hydrogen;methane;polycrystalline silicon;sapphire;silane;silicon;silicon derivative;unclassified drug;article;crystal;cyclotron;electric potential;electron cyclotron resonance;electron microscopy;low temperature;nanoparticle;racemic mixture;technique
Type
journal article