https://scholars.lib.ntu.edu.tw/handle/123456789/616401
標題: | Generally applicable self-masked dry etching technique for nanotip array fabrication | 作者: | Hsu C.-H. Lo H.-C. Chen C.-F. Wu C.T. Hwang J.-S. Das D. Tsai J. Chen L.-C. Chen K.-H. LI-CHYONG CHEN |
公開日期: | 2004 | 卷: | 4 | 期: | 3 | 起(迄)頁: | 471-475 | 來源出版物: | Nano Letters | 摘要: | Well-aligned nanotip arrays were fabricated by electron cyclotron resonance (ECR) plasma process using gas mixtures of silane, methane, argon, and hydrogen. The resultant tips have nanoscale apexes (∼1 nm) with high aspect ratios (∼50), which were achieved by simultaneous SiC nanomask formation and dry etching during ECR plasma process. This technique was applied to a variety of substrates such as silicon, polycrystalline silicon, gallium nitride, gallium phosphide, sapphire, and aluminum, indicating its general applicability. High-resolution transmission electron microscopy and Auger depth profile analyses revealed that the SiC cap, with Si:C ratio of 1:1, exhibited 3C-SiC and 2H-SiC structure on Si and GaP, respectively, with heteroepitaxial relationship. This one-step self-masked dry etching technique enables the fabrication of uniform nanotip arrays on various substrates over large area at low process temperatures, thereby demonstrating a high potential for practical industrial application. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-1642528431&doi=10.1021%2fnl049925t&partnerID=40&md5=7b68814dc6a0d62d4ff06de29ded9fcf https://scholars.lib.ntu.edu.tw/handle/123456789/616401 |
ISSN: | 15306984 | DOI: | 10.1021/nl049925t | SDG/關鍵字: | aluminum;argon;crystallin;gallium;gallium nitride;gallium phosphide;hydrogen;methane;polycrystalline silicon;sapphire;silane;silicon;silicon derivative;unclassified drug;article;crystal;cyclotron;electric potential;electron cyclotron resonance;electron microscopy;low temperature;nanoparticle;racemic mixture;technique |
顯示於: | 凝態科學研究中心 |
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