Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy
Journal
Solid-State Electronics
Journal Volume
45
Journal Issue
3
Pages
423-426
Date Issued
2001
Author(s)
Abstract
The depth profile of high resolution photoelectron spectra at Ga2O3(Gd2O3)/GaAs and Ga2O3/GaAs interfaces have been obtained by using synchrotron radiation beam and low energy Ar+ sputtering. Only one intermediary Ga oxidation state at binding energy ∼20.3 eV has been observed in the Ga2O3(Gd2O3)/GaAs sample. The data suggest that the presence of Gd stabilizes the Ga3+ oxidation state and leads to the excellent electrical insulating property of the Ga2O3(Gd2O3) film. © 2001 Elsevier Science Ltd.
SDGs
Type
journal article