Improving electrical properties of ZnO thin films by the combination of plasma treatment, post-annealing and doping
Journal
2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Pages
756-759
Date Issued
2008
Author(s)
Shie, T.-Y.
Abstract
The effect of Ar plasma and post-annealing on the electrical properties of undoped and Al-doped ZnO films deposited on glass substrates using the sol-gel spin-coating technique are investigated. The surface morphology of ZnO thin films shows that the grain boundaries of ZnO grains become indistinct after plasma treatment. With the appropriate processing sequence, the resistivity of ZnO thin films decreases significantly to the order of 10 -3 .
SDGs
Type
conference paper