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  4. A method using V-grooves to monitor the thickness of silicon membrane with μm resolution
 
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A method using V-grooves to monitor the thickness of silicon membrane with μm resolution

Journal
Journal of Micromechanics and Microengineering
Journal Volume
8
Journal Issue
3
Pages
182-187
Date Issued
1998
Author(s)
Chang, P.-Z.
Yang, L.-J.
PEI-ZEN CHANG  
DOI
10.1088/0960-1317/8/3/002
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/486866
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-0032166241&doi=10.1088%2f0960-1317%2f8%2f3%2f002&partnerID=40&md5=366b13e5020b3f3ae9724554bb148cac
Abstract
This article presents a method capable of easily identifying the membrane thickness of micro-sensors by a V-groove depth ruler that has been made in advance on silicon wafers before sensor fabrication. The proposed method not only provides a viable alternative to other etch-stop techniques, but can also be used as an in situ tool for depth or thickness monitoring with micrometer resolution. Without p+ diffusion or an n-epitaxial layer on silicon substrates, the batch processing capability of silicon piezoresisitve micro-sensors can be preserved with V-grooves. Furthermore, the method proposed herein could also calibrate the etching rate of anisotropic etching solutions, check the uniformity of pressure sensors and offer guidelines on how to further improve the batch process of silicon bulk micro-machining. Moreover, a revised shape of V-groove depth ruler with self-alignment capability is also proposed herein.
SDGs

[SDGs]SDG7

Type
journal article

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