Molecular beam epitaxy-grown Al2O3/HfO2 high-庥 dielectrics for germanium
Journal
Journal of Crystal Growth
Journal Volume
311
Journal Issue
7
Pages
2187-2190
Date Issued
2009
Author(s)
Abstract
Electrical properties and thermal stability have been studied in molecular beam epitaxy (MBE)-grown high-κ dielectric Al2O3/HfO2 on Ge substrate. An abrupt HfO2/Ge interface without any interfacial layer was revealed using high-resolution transmission electron microscope and angle-resolved X-ray photoelectron spectroscopy. Capacitance-voltage characteristics, exhibiting accumulation and inversion and a high κ-value of about 20 for HfO2, and a low leakage current density at flat-band voltage +1 V of 8×10-5 A/cm2 were obtained for metal-oxide-semiconductor capacitors (MOSCAPs) of Al2O3(3.3 nm)/HfO2(2.8 nm)/Ge annealed at 500 °C in N2 ambient for 20 min. MBE-grown Al2O3/HfO2 is the promising high-κ dielectric to realize a high-performance Ge metal-oxide-semiconductor field-effect-transistor. © 2008 Elsevier B.V. All rights reserved.
SDGs
Type
journal article