Ultralow Schottky Barriers in Hexagonal Boron Nitride-Encapsulated Monolayer WSe2 Tunnel Field-Effect Transistors
Journal
ACS applied materials & interfaces
Journal Volume
12
Journal Issue
16
Pages
18667-18673
Date Issued
2020
Author(s)
Pande, G.
Siao, J.-Y.
Chen, W.-L.
Lee, C.-J.
Sankar, R.
Chen, C.-D.
Chang, W.-H.
Chou, F.-C.
Publisher
NLM (Medline)
Type
journal article