Study of the Factors Limiting the Efficiency of Vertical-Type Nitride-and AlInGaP-Based Quantum-Well Micro-LEDs

The efficiency of micro-light-emitting diodes (µ-LEDs) depends enormously on the chip size, and this is connected to sidewall-trap-assisted nonradiative recombination. It is known that the internal quantum efficiency (IQE) of aluminum gallium indium phosphide (AlGaInP)-based red µ-LEDs is much lower than that of nitride-based µ-LEDs. To establish the major reasons giving rise to this huge IQE discrepancy, we examined the limiting factors in the two structures. For the nitride-based InGaN quantum wells, the influences of random alloy fluctuations were examined. A two-dimensional Poisson and drift-diffusion solver was applied to analyze these issues. © 2022 by the authors. Licensee MDPI, Basel, Switzerland.