https://scholars.lib.ntu.edu.tw/handle/123456789/632068
標題: | Study of the Factors Limiting the Efficiency of Vertical-Type Nitride-and AlInGaP-Based Quantum-Well Micro-LEDs | 作者: | Ho C.-H Chen S.-M YUH-RENN WU |
關鍵字: | AlGaInP-based red µ-LEDs; Nitride-based µ-LEDs; Random alloy fluctuations; Sidewall-trap | 公開日期: | 2022 | 卷: | 10 | 期: | 3 | 來源出版物: | Processes | 摘要: | The efficiency of micro-light-emitting diodes (µ-LEDs) depends enormously on the chip size, and this is connected to sidewall-trap-assisted nonradiative recombination. It is known that the internal quantum efficiency (IQE) of aluminum gallium indium phosphide (AlGaInP)-based red µ-LEDs is much lower than that of nitride-based µ-LEDs. To establish the major reasons giving rise to this huge IQE discrepancy, we examined the limiting factors in the two structures. For the nitride-based InGaN quantum wells, the influences of random alloy fluctuations were examined. A two-dimensional Poisson and drift-diffusion solver was applied to analyze these issues. © 2022 by the authors. Licensee MDPI, Basel, Switzerland. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85125705409&doi=10.3390%2fpr10030489&partnerID=40&md5=7f5b665572525fa10144f7fe0fd8f3e7 https://scholars.lib.ntu.edu.tw/handle/123456789/632068 |
ISSN: | 22279717 | DOI: | 10.3390/pr10030489 |
顯示於: | 電機工程學系 |
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