Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
New user? Click here to register.
Have you forgotten your password?
Home
College of Science / 理學院
Physics / 物理學系
The growth of an epitaxial ZnO film on Si(111) with a Gd<inf>2</inf>O <inf>3</inf>(Ga<inf>2</inf>O<inf>3</inf>) buffer layer
Details
The growth of an epitaxial ZnO film on Si(111) with a Gd2O 3(Ga2O3) buffer layer
Journal
Crystal Growth and Design
Journal Volume
11
Journal Issue
7
Pages
2846-2851
Date Issued
2011
Author(s)
Lin, B.H.
Liu, W.R.
Yang, S.
Kuo, C.C.
Hsu, C.-H.
Hsieh, W.F.
Lee, W.C.
Lee, Y.J.
MINGHWEI HONG
Kwo, J.
DOI
10.1021/cg1016774
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443357
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-79960066696&doi=10.1021%2fcg1016774&partnerID=40&md5=66ea2d00595f2d86e9eceff22cc0a934
Type
journal article