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College of Science / 理學院
Physics / 物理學系
The growth of an epitaxial ZnO film on Si(111) with a Gd<inf>2</inf>O <inf>3</inf>(Ga<inf>2</inf>O<inf>3</inf>) buffer layer
Details
The growth of an epitaxial ZnO film on Si(111) with a Gd2O 3(Ga2O3) buffer layer
Journal
Crystal Growth and Design
Journal Volume
11
Journal Issue
7
Pages
2846-2851
Date Issued
2011
Author(s)
Lin, B.H.
Liu, W.R.
Yang, S.
Kuo, C.C.
Hsu, C.-H.
Hsieh, W.F.
Lee, W.C.
Lee, Y.J.
MINGHWEI HONG
Kwo, J.
DOI
10.1021/cg1016774
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/443357
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-79960066696&doi=10.1021%2fcg1016774&partnerID=40&md5=66ea2d00595f2d86e9eceff22cc0a934
Type
journal article