The growth of an epitaxial ZnO film on Si(111) with a Gd2O 3(Ga2O3) buffer layer
Journal
Crystal Growth and Design
Journal Volume
11
Journal Issue
7
Pages
2846-2851
Date Issued
2011
Author(s)
Abstract
High-quality (0001)-oriented ZnO epitaxial films have been grown by pulsed laser deposition on Si(111) buffered with a nanometer-thick Gd2O 3(Ga2O3), GGO, layer. The structural characteristics of the ZnO epi-layers were studied by X-ray diffraction and transmission electron microscopy (TEM). The in-plane epitaxial relationship between the wurtzite ZnO, cubic GGO, and cubic Si follows {101̄0} ZnO∥{42̄2̄}Gd2O3∥{4̄22} Si and the ZnO/GGO interface can be described by the domain matching epitaxy. TEM contrast analysis reveals that the major defect structures in the ZnO films are edge-type threading dislocations and intrinsic basal plane stacking faults. All the ZnO epi-films studied are under a tensile biaxial strain, but no cracks were found. Temperature-dependent photoluminescence results show the excellent optical properties of the obtained ZnO layers, and the origins of the spectral features are discussed. © 2011 American Chemical Society.
Type
journal article