Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance
Journal
Applied Physics Letters
Journal Volume
66
Journal Issue
19
Pages
2543-2545
Date Issued
1995
Author(s)
Abstract
We report an investigation of optical and electronic properties in InAlAs/InGaAs heterojunction bipolar transistor layers by optical detection of cyclotron resonance (ODCR). Strong ODCR spectra structured by quantum oscillations have been observed, from which the effective mass and the carrier concentration of the twoâ€dimensional electron gas can be obtained. The measured cyclotron mass is heavier than the conductionâ€bandâ€edge mass in bulk InGaAs. We find that the carrier concentration increases with the spacer thickness. Quite unexpectedly, we also find that the effective mass increases with decreasing the carrier concentration. © 1995, American Institute of Physics. All rights reserved.
Type
journal article