Physical Thickness 1.x nm Ferroelectric HfZrOx Negative Capacitance FETs
Journal
International Electron Devices Meeting (IEDM)
Date Issued
2016
Author(s)
M. H. Lee
S.-T. Fan
C.-H. Tang
P.-G. Chen
Y.-C. Chou
H.-H. Chen
J.-Y. Kuo
M.-J. Xie
S.-N. Liu
M.-H. Liao
C.-A. Jong
K.-S. Li
M.-C. Chen
C. W. Liu
Type
conference paper