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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETs
Details
High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETs
Journal
IEICE Transactions on Electronics
Journal Volume
E84-C
Journal Issue
10
Pages
1312-1317
Date Issued
2001-10
Author(s)
H. C. Chiu
S. C. Yang
Y. J. Chan
HAO-HSIUNG LIN
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/294269
Type
journal article
