Resistive heated MOCVD deposition of InN films
Journal
Materials Chemistry and Physics
Journal Volume
72
Journal Issue
2
Pages
290-295
Date Issued
2001-11
Author(s)
Hwang, Jih-Shang
Lee, Chung-Han
Yang, Fuh-Hsiang
Chen, Kuei-Hsien
Hwa, Luu-Gen
Abstract
Indium nitride (InN) film was successfully grown on sapphire (0 0 0 1) substrate using a simple resistive heated metalorganic chemical vapor deposition (MOCVD) system by utilizing a pyrolytic boron nitride (PBN) heater with a precise temperature control within 1 °C. Structural studies and optical property measurement by scanning electron microscope (SEM), X-ray diffraction (XRD), Raman spectroscopy and photoluminescence of the films were presented. An improved epitaxy was achieved in films grown at a high substrate temperature (540°C). The room temperature photoluminescence spectrum of the InN film showed a strong peak at 1.8 eV. Further high resolution transmission electron microscopy (HRTEM) investigation revealed some inclusion of nanocrystalline phase, which might be responsible for the strong photoluminescence signal. © 2001 Elsevier Science B.V. All rights reserved.
Subjects
Electron microscopy; MOCVD; Nitrides; Optical properties
Other Subjects
Indium compounds; Metallorganic chemical vapor deposition; Photoluminescence; Raman spectroscopy; Scanning electron microscopy; Transmission electron microscopy; X ray diffraction analysis; Indium nitride; Semiconducting films
Type
journal article