https://scholars.lib.ntu.edu.tw/handle/123456789/294638
標題: | Resistive heated MOCVD deposition of InN films | 作者: | J. S. Hwang C. H. Lee F. H. Yang K. H. Chen L. G. Hwa LI-CHYONG CHEN YING-JAY YANG |
關鍵字: | Electron microscopy; MOCVD; Nitrides; Optical properties | 公開日期: | 十一月-2001 | 卷: | 72 | 期: | 2 | 起(迄)頁: | 290-295 | 來源出版物: | Materials Chemistry and Physics | 摘要: | Indium nitride (InN) film was successfully grown on sapphire (0 0 0 1) substrate using a simple resistive heated metalorganic chemical vapor deposition (MOCVD) system by utilizing a pyrolytic boron nitride (PBN) heater with a precise temperature control within 1 °C. Structural studies and optical property measurement by scanning electron microscope (SEM), X-ray diffraction (XRD), Raman spectroscopy and photoluminescence of the films were presented. An improved epitaxy was achieved in films grown at a high substrate temperature (540°C). The room temperature photoluminescence spectrum of the InN film showed a strong peak at 1.8 eV. Further high resolution transmission electron microscopy (HRTEM) investigation revealed some inclusion of nanocrystalline phase, which might be responsible for the strong photoluminescence signal. © 2001 Elsevier Science B.V. All rights reserved. |
URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/294638 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035500476&doi=10.1016%2fS0254-0584%2801%2900455-2&partnerID=40&md5=bfb2c91106e95e48345190a23a29f8e6 |
ISSN: | 02540584 | DOI: | 10.1016/S0254-0584(01)00455-2 | SDG/關鍵字: | Indium compounds; Metallorganic chemical vapor deposition; Photoluminescence; Raman spectroscopy; Scanning electron microscopy; Transmission electron microscopy; X ray diffraction analysis; Indium nitride; Semiconducting films |
顯示於: | 電機工程學系 |
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