Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum
Journal
Solid-State Electronics
Journal Volume
47
Journal Issue
10
Pages
1775-1780
Date Issued
2003
Author(s)
Peng, Y.H.
Chen, C.C.
CHIEH-HSIUNG KUAN
Cheng, H.H.
Abstract
A p-type Ge quantum dot infrared photodetector is investigated in this paper. The intrinsic thick Si layers are utilized to block the dark current under low bias and adjust the tunneling probability by controlling applied field to tune the responsivity spectrum. The 30 K responsivity spectrum shows broadband from 2 to 9 μm at zero bias with photovoltaic effect and extends its range to 20 μm when the applied bias is increased. For long wavelength detection, our detector is tunable with Si blocking layer. The detectivity in this sample has maximum value toward 2.1 × 1010 cm (Hz0.5)/W under 0.2 V for the 6 μm wavelength. That for the long wavelength is ∼109 cm (Hz0.5)/W. © 2003 Elsevier Ltd. All rights reserved.
Subjects
Blocking layer; Ge quantum dot infrared photodetector; Long wavelength infrared photodetector; Wavelength tunability
SDGs
Other Subjects
Electric currents; Infrared radiation; Photodetectors; Photovoltaic effects; Semiconducting silicon; Spectrum analysis; Blocking layers; Semiconductor quantum dots
Type
conference paper