A new InGaP/AlGaAs/GaAs composite-emitter heterojunction bipolar transistors
Journal
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Journal Volume
2002-January
Pages
389-392
Date Issued
2002-10
Author(s)
Abstract
This paper reported a new composite-emitter heterojunction bipolar transistor (CEHBT) with a composite emitter formed of a 0.04μm In0.5Ga0.5P bulk layer and a 0.06μm AI045Ga0.55As/GaAs digital graded superlattice (DGSL) layer. The CEHBT's exhibit a small collector-emitter offset voltage of 55 mV and a base-emitter turn-on voltage of 0.87 V, which is 0.4 V lower than that of 1.27 V of the InGaP/AlGaAs abrupt-emitter HBT. It is found that CEHBTs exhibits a current gain as high as 250 and is even enhanced to 385 when only a DGSL layer is used for passivation layer. © 2002 IEEE.
SDGs
Other Subjects
Amplification; Gallium; Heterojunctions; Microelectronics; Base emitters; Collector emitters; Composite emitters; Current gains; Passivation layer; Turn-on voltages; Heterojunction bipolar transistors
Type
conference paper
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