https://scholars.lib.ntu.edu.tw/handle/123456789/299390
標題: | A new InGaP/AlGaAs/GaAs composite-emitter heterojunction bipolar transistors | 作者: | Tsai, M.K. Wu, Y.W. Tan, S.W. Chu, M.Y. Chen, W.T. Yang, Y.J. Lour, W.S. YING-JAY YANG |
公開日期: | 十月-2002 | 卷: | 2002-January | 起(迄)頁: | 389-392 | 來源出版物: | Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD | 摘要: | This paper reported a new composite-emitter heterojunction bipolar transistor (CEHBT) with a composite emitter formed of a 0.04μm In0.5Ga0.5P bulk layer and a 0.06μm AI045Ga0.55As/GaAs digital graded superlattice (DGSL) layer. The CEHBT's exhibit a small collector-emitter offset voltage of 55 mV and a base-emitter turn-on voltage of 0.87 V, which is 0.4 V lower than that of 1.27 V of the InGaP/AlGaAs abrupt-emitter HBT. It is found that CEHBTs exhibits a current gain as high as 250 and is even enhanced to 385 when only a DGSL layer is used for passivation layer. © 2002 IEEE. |
URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/299390 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84952651553&doi=10.1109%2fCOMMAD.2002.1237272&partnerID=40&md5=6e9f8d850f03e3f0d02cc12794fc6d5c |
DOI: | 10.1109/COMMAD.2002.1237272 | SDG/關鍵字: | Amplification; Gallium; Heterojunctions; Microelectronics; Base emitters; Collector emitters; Composite emitters; Current gains; Passivation layer; Turn-on voltages; Heterojunction bipolar transistors |
顯示於: | 電機工程學系 |
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