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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
First-principles study of GeO 2/Ge interfacial traps and oxide defects
Details
First-principles study of GeO 2/Ge interfacial traps and oxide defects
Journal
2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
Pages
144-145
Date Issued
2012
Author(s)
CHEE-WEE LIU
Lu, S.-C.
Chang, H.-C.
Chou, T.-P.
CHEE-WEE LIU
DOI
10.1109/ISTDM.2012.6222499
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84864202629&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/372789
SDGs
[SDGs]SDG7
Type
conference paper
