Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy
Journal
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials
Pages
350-353
Date Issued
2007-05
Author(s)
Abstract
We report the incorporation behaviors of Sb and N in GaAsSbN epilayers grown by gas source molecular beam epitaxy. Our study reveals that N incorporation is independent of the growth temperature and the Sb flux. Lattice-matched GaAsSbN layers show lower energy gaps than those of InGaAsN reported in literatures. The lowest energy gap achieved in this study is 0.79 eV. © 2007 IEEE.
Other Subjects
Antimony; Energy gap; Epilayers; Growth temperature; Molecular beam epitaxy; Nitrogen; Lattice-matching; Semiconducting gallium compounds
Type
conference paper