RF Performance of Stacked Si Nanosheets/Nanowires
Journal
IEEE Electron Device Letters
Journal Issue
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85131738813&doi=10.1109%2fLED.2022.3179516&partnerID=40&md5=a1ca1d55d7651f312ec70c555ff8399b
Pages
1????
Date Issued
2022
Author(s)
Abstract
5G mm-Wave; 6G; Capacitance; contact over active-gate; cut-off frequency; Fingers; gate-all-around; Layout; Logic gates; maximum oscillation frequency; Nanowires; Radio frequency; RF; stacked nanosheet; stacked nanowire; Transistors
Subjects
5G mobile communication systems; Millimeter waves; Nanosheets; Nanowires; Silicon; 5g mm-wave; 6g; Contact over active-gate; Cut-off frequencies; Finger; Gate-all-around; Layout; Maximum oscillation frequency; Mm waves; Radiofrequencies; RF; Stacked nanosheet; Stacked nanowire; Logic gates
Type
journal article