https://scholars.lib.ntu.edu.tw/handle/123456789/632199
標題: | RF Performance of Stacked Si Nanosheets/Nanowires | 作者: | Lin H Chou T Chiu K Jan S Chung C Tsen C CHEE-WEE LIU |
關鍵字: | 5G mobile communication systems; Millimeter waves; Nanosheets; Nanowires; Silicon; 5g mm-wave; 6g; Contact over active-gate; Cut-off frequencies; Finger; Gate-all-around; Layout; Maximum oscillation frequency; Mm waves; Radiofrequencies; RF; Stacked nanosheet; Stacked nanowire; Logic gates | 公開日期: | 2022 | 期: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85131738813&doi=10.1109%2fLED.2022.3179516&partnerID=40&md5=a1ca1d55d7651f312ec70c555ff8399b | 起(迄)頁: | 1???? | 來源出版物: | IEEE Electron Device Letters | 摘要: | 5G mm-Wave; 6G; Capacitance; contact over active-gate; cut-off frequency; Fingers; gate-all-around; Layout; Logic gates; maximum oscillation frequency; Nanowires; Radio frequency; RF; stacked nanosheet; stacked nanowire; Transistors |
URI: | 2-s2.0-85131738813 https://scholars.lib.ntu.edu.tw/handle/123456789/632199 |
ISSN: | RF performance of stacked Si nanosheet/nanowire nFETs considering 6/10-lateral-stack 4-finger transistor array is studied and optimized by validated TCAD simulation. Compared with nFinFETs, stacked Si nanosheets/nanowires can have 2.0/2.2× cut-off frequency (435/480 vs 215 GHz) and 1.6/2.3× maximum oscillation frequency (405/575 vs 251 GHz) with an optimized equivalent oxide thickness of 0.8nm, a gate length of 18nm, and a floor number of 4/6, using the double-sided gate contact array layout. Because of the small channel cross section of nanowires and the lower carrier density at central nanosheets than edges, stacked nanowires can achieve better RF performance than stacked nanosheets. As the lateral stack number increases to enhance the output power, the contact over active-gate layout can maintain both the high cut-off frequency and the high maximum oscillation frequency of stacked nanosheets and stacked nanowires. IEEE | DOI: | 10.1109/LED.2022.3179516 |
顯示於: | 電機工程學系 |
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