A single InN nanopillar photodetector with extended infrared response grown by MOCVD
Journal
2016 Conference on Lasers and Electro-Optics, CLEO 2016
Date Issued
2016
Author(s)
Abstract
An extended infrared photoresponse is observed in a high quality InN pillar/p-GaN photodetector with self-assembly epitaxy grown by LP-MOCVD. The IR portion photocurrent as high as 14.2% can be measured via AM1.5G solar simulated spectra. © 2016 OSA.
Other Subjects
Gallium compounds; III-V semiconductors; Photodetectors; Photons; Self assembly; High quality; Infrared response; LP-MOCVD; NanoPillar; Photoresponses; Simulated spectra; Indium compounds
Type
conference paper