https://scholars.lib.ntu.edu.tw/handle/123456789/632181
標題: | A single InN nanopillar photodetector with extended infrared response grown by MOCVD | 作者: | Hsu L.-H Kuo C.-T Cheng Y.-J Chen K.-C Kuo H.-C Lin S.-Y CHIEN-CHUNG LIN |
公開日期: | 2016 | 來源出版物: | 2016 Conference on Lasers and Electro-Optics, CLEO 2016 | 摘要: | An extended infrared photoresponse is observed in a high quality InN pillar/p-GaN photodetector with self-assembly epitaxy grown by LP-MOCVD. The IR portion photocurrent as high as 14.2% can be measured via AM1.5G solar simulated spectra. © 2016 OSA. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85010660085&doi=10.1364%2fcleo_si.2016.sm4r.7&partnerID=40&md5=e5ce9332f61ee6028b3d3ebfe296a103 https://scholars.lib.ntu.edu.tw/handle/123456789/632181 |
DOI: | 10.1364/cleo_si.2016.sm4r.7 | SDG/關鍵字: | Gallium compounds; III-V semiconductors; Photodetectors; Photons; Self assembly; High quality; Infrared response; LP-MOCVD; NanoPillar; Photoresponses; Simulated spectra; Indium compounds |
顯示於: | 電機工程學系 |
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