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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
On the High Frequency Properties of InGaAs Bipolar Transistors
Details
On the High Frequency Properties of InGaAs Bipolar Transistors
Resource
19th EDMS, p.307-310
The 19th EDMS, Chungli(1993)
Journal
19th EDMS
Pages
307-310
Date Issued
1993
Date
1993
Author(s)
Lin, Hao-Hsiung
URI
http://ntur.lib.ntu.edu.tw//handle/246246/121497
Type
conference paper