Effect of rapid thermal annealing on carrier lifetimes of arsenic-ion-implanted GaAs
Journal
Applied Physics Letters
Journal Volume
69
Journal Issue
7
Pages
996-998
Date Issued
1996
Author(s)
Abstract
Femtosecond time-resolved reflectivity measurements, structural, and electrical analyses have been performed to investigate the effect of rapid thermal annealing (RTA) on GaAs implanted with 200 keV arsenic ions at 1016 ions/cm2. Ultrashort carrier lifetimes from 0.48 fs to 2.3 ps were observed for samples annealed at temperatures between 600 and 800 °C. The time constants are somewhat shorter than those of RTA-annealed low-temperature molecular-beam epitaxy grown material, while following the same trend of longer time constants and recovery of resistance at higher annealing temperatures. Arsenic precipitates were not observed.
Type
journal article