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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Effect of rapid thermal annealing on carrier lifetimes of arsenic-ion-implanted GaAs
Details
Effect of rapid thermal annealing on carrier lifetimes of arsenic-ion-implanted GaAs
Journal
Applied Physics Letters
Journal Volume
69
Journal Issue
7
Pages
996-998
Date Issued
1996
Author(s)
Lin, G.-R.
Chen, W.-C.
Ganikhanov, F.
Chang, C.-S.
Pan, C.-L.
GONG-RU LIN
DOI
10.1063/1.117107
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/500215
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-0000173763&doi=10.1063%2f1.117107&partnerID=40&md5=cacc07cb7101f11e5751a17ca6cf6db6
Type
journal article