Strained Ge0.91Sn0.09Quantum Well p-MOSFETs
Journal
2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
Pages
132-133
Date Issued
2016
Author(s)
Huang Y.-S
Huang C.-H
Huang C.-H
Lu F.-L
Chang D.-Z
Lin C.-Y
Wong I.-H
Jan S.-R
Lan H.-S
Huang Y.-C
Chung H
Chang C.-P
Chu S.S
Kuppurao S.
Abstract
Pseudomorphic Ge0.91Sn0.09 on Ge on Si with strong photoluminescence and low defect density is used for p-MOSFET channels. The mobility of Ge0.91Sn0.09 Quantum Well p-MOSFETs are higher than control Ge p-MOSFETs due to hole population in the GeSn wells. The 7.5% mobility enhancement on <110> channel direction is observed using external transverse uniaxial tensile strain (??.11%). The highest [Sn] of 9% in the channels grown by CVD, Pt SB S/D, high Ion/Ioff ratio, and strain-enhanced mobility are obtained in this work. © 2016 IEEE.
Other Subjects
Defect density; Germanium; Hole mobility; Nanoelectronics; Semiconductor quantum wells; Tensile strain; Tin; Channel directions; Enhanced mobility; Hole populations; Low defect densities; Mobility enhancement; p-MOSFETs; Strained-Ge; Uniaxial tensile strain; MOSFET devices
Type
conference paper