https://scholars.lib.ntu.edu.tw/handle/123456789/632196
標題: | Strained Ge0.91Sn0.09Quantum Well p-MOSFETs | 作者: | Huang Y.-S Huang C.-H Huang C.-H Lu F.-L Chang D.-Z Lin C.-Y Wong I.-H Jan S.-R Lan H.-S CHEE-WEE LIU Huang Y.-C Chung H Chang C.-P Chu S.S Kuppurao S. |
公開日期: | 2016 | 起(迄)頁: | 132-133 | 來源出版物: | 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 | 摘要: | Pseudomorphic Ge0.91Sn0.09 on Ge on Si with strong photoluminescence and low defect density is used for p-MOSFET channels. The mobility of Ge0.91Sn0.09 Quantum Well p-MOSFETs are higher than control Ge p-MOSFETs due to hole population in the GeSn wells. The 7.5% mobility enhancement on <110> channel direction is observed using external transverse uniaxial tensile strain (??.11%). The highest [Sn] of 9% in the channels grown by CVD, Pt SB S/D, high Ion/Ioff ratio, and strain-enhanced mobility are obtained in this work. © 2016 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84994731825&doi=10.1109%2fSNW.2016.7578018&partnerID=40&md5=8afe413d3b9e9803f7ba13cb678c0050 https://scholars.lib.ntu.edu.tw/handle/123456789/632196 |
DOI: | 10.1109/SNW.2016.7578018 | SDG/關鍵字: | Defect density; Germanium; Hole mobility; Nanoelectronics; Semiconductor quantum wells; Tensile strain; Tin; Channel directions; Enhanced mobility; Hole populations; Low defect densities; Mobility enhancement; p-MOSFETs; Strained-Ge; Uniaxial tensile strain; MOSFET devices |
顯示於: | 電機工程學系 |
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