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College of Electrical Engineering and Computer Science / 電機資訊學院
Photonics and Optoelectronics / 光電工程學研究所
Improvement of External Extraction Efficiency in GaN-Based LEDs by <formula formulatype="inline"><tex Notation="TeX">$ \\hbox{SiO}_{2}$</tex></formula> Nanosphere Lithography
Details
Improvement of External Extraction Efficiency in GaN-Based LEDs by $ \\hbox{SiO}_{2}$ Nanosphere Lithography
Journal
IEEE Electron Device Letters
Journal Volume
29
Journal Issue
7
Pages
658--660
Date Issued
2008-07
Author(s)
JIAN-JANG HUANG
CHIH-CHUNG YANG
DOI
10.1109/led.2008.2000918
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/340870
Type
journal article
