Size-Dependent Switching Properties of Spin-Orbit Torque MRAM with Manufacturing-Friendly 8-Inch Wafer-Level Uniformity
Journal
IEEE Journal of the Electron Devices Society
Journal Volume
8
Pages
163-169
Date Issued
2020
Author(s)
Rahaman, S.Z.
Su, Y.-H.
Chen, G.-L.
Chen, F.-M.
Wei, J.-H.
Hou, T.-H.
Sheu, S.-S.
Deng, D.-L.
Wang, I.-J.
Wang, D.-Y.
Hsin, Y.-C.
Yang, S.-Y.
Lee, H.-H.
Chang, Y.-J.
Abstract
We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process. The proposed SOT-MRAM process technology resolves etching non-uniformity and reduction of high resistivity heavy-metal nanowire resistance issues. Besides, we present device size-dependent switching current threshold in the proposed SOT-MRAM cell structure. To realize the potential of our fabricated SOT-MRAM, wafer-level uniformity, cycling and temperature dependence SOT switching have been comprehensively investigated. Furthermore, the thermal stability factor ( ${\Delta }$ ) was calculated from temperature-dependence SOT switching to fulfill the thermal stability criteria, i.e., > 10 years of this emerging SOT-MRAM technology. © 2013 IEEE.
Subjects
magnetic tunnel junction; spin-hall effect; spin-orbit torque; spin-transfer torque; Spintronics
Other Subjects
Etching; Heavy metals; Magnetic recording; Manufacture; MRAM devices; Random access storage; Spin Hall effect; Spintronics; Stability criteria; Switching; Temperature distribution; Thermodynamic stability; Torque; Tunnel junctions; Etching non-uniformity; Magnetic random access memory; Magnetic tunnel junction; Process Technologies; Spin orbits; Spin transfer torque; Switching properties; Temperature dependence; Magnetic storage
Type
journal article