https://scholars.lib.ntu.edu.tw/handle/123456789/546648
標題: | Size-Dependent Switching Properties of Spin-Orbit Torque MRAM with Manufacturing-Friendly 8-Inch Wafer-Level Uniformity | 作者: | Rahaman, S.Z. Su, Y.-H. Chen, G.-L. Chen, F.-M. Wei, J.-H. Hou, T.-H. Sheu, S.-S. CHIH-I WU Deng, D.-L. Wang, I.-J. Wang, D.-Y. CHI-FENG PAI Hsin, Y.-C. Yang, S.-Y. Lee, H.-H. Chang, Y.-J. |
關鍵字: | magnetic tunnel junction; spin-hall effect; spin-orbit torque; spin-transfer torque; Spintronics | 公開日期: | 2020 | 卷: | 8 | 起(迄)頁: | 163-169 | 來源出版物: | IEEE Journal of the Electron Devices Society | 摘要: | We have developed a manufacturing-friendly spin-orbit torque magnetic random access memory (SOT-MRAM) technology in CMOS compatible 8-inch fab process. The proposed SOT-MRAM process technology resolves etching non-uniformity and reduction of high resistivity heavy-metal nanowire resistance issues. Besides, we present device size-dependent switching current threshold in the proposed SOT-MRAM cell structure. To realize the potential of our fabricated SOT-MRAM, wafer-level uniformity, cycling and temperature dependence SOT switching have been comprehensively investigated. Furthermore, the thermal stability factor ( ${\Delta }$ ) was calculated from temperature-dependence SOT switching to fulfill the thermal stability criteria, i.e., > 10 years of this emerging SOT-MRAM technology. © 2013 IEEE. |
URI: | https://www.scopus.com/inward/record.url?eid=2-s2.0-85080135665&partnerID=40&md5=1a227781068651b79b35aa5aa9c3648d https://scholars.lib.ntu.edu.tw/handle/123456789/546648 |
ISSN: | 21686734 | DOI: | 10.1109/JEDS.2020.2971892 | SDG/關鍵字: | Etching; Heavy metals; Magnetic recording; Manufacture; MRAM devices; Random access storage; Spin Hall effect; Spintronics; Stability criteria; Switching; Temperature distribution; Thermodynamic stability; Torque; Tunnel junctions; Etching non-uniformity; Magnetic random access memory; Magnetic tunnel junction; Process Technologies; Spin orbits; Spin transfer torque; Switching properties; Temperature dependence; Magnetic storage |
顯示於: | 材料科學與工程學系 |
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