Accurate evaluation of cr/n-si schottky barrier height using thermionic emission theory and external resistors

The Cr/n-Si Schottky interface can effectively extend the cutoff wavelength of the silicon-based device. The estimated barrier height, ideality factor, and series resistance are obtained by characteristic curves and thermionic-emission formula. In order to improve the accuracy of the estimation, a method of adjusting the external resistance in the experimental setup was proposed in this paper. Eventually, the Cr/n-Si Schottky device was well analyzed with an estimated error of < 0.05 in the resistance value, and the results also confirmed that the detection wavelength of the silicon-based components could be extended to mid-infrared range. ? 2021 SPIE. All rights reserved.