https://scholars.lib.ntu.edu.tw/handle/123456789/607036
標題: | Accurate evaluation of cr/n-si schottky barrier height using thermionic emission theory and external resistors | 作者: | Su Z.-C CHING-FUH LIN |
關鍵字: | Metal-semiconductor;Near-infrared range;Photodiode;Silicon based photodetector;Silicon photonic;Electric resistance;Infrared detectors;Schottky barrier diodes;Silicon;Thermionic emission;Characteristic curve;Cutoff wavelengths;Detection wavelengths;External resistance;Schottky barrier heights;Series resistances;Silicon-based devices;Thermionic emission theory;Infrared devices | 公開日期: | 2021 | 卷: | 11831 | 來源出版物: | Proceedings of SPIE - The International Society for Optical Engineering | 摘要: | The Cr/n-Si Schottky interface can effectively extend the cutoff wavelength of the silicon-based device. The estimated barrier height, ideality factor, and series resistance are obtained by characteristic curves and thermionic-emission formula. In order to improve the accuracy of the estimation, a method of adjusting the external resistance in the experimental setup was proposed in this paper. Eventually, the Cr/n-Si Schottky device was well analyzed with an estimated error of < 0.05 in the resistance value, and the results also confirmed that the detection wavelength of the silicon-based components could be extended to mid-infrared range. ? 2021 SPIE. All rights reserved. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85113884866&doi=10.1117%2f12.2594066&partnerID=40&md5=50121e7cd6275f3ebff962c41fcfe849 https://scholars.lib.ntu.edu.tw/handle/123456789/607036 |
ISSN: | 0277786X | DOI: | 10.1117/12.2594066 |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。