Improvement of GaN epitaxial layer and AlGaN/GaN HEMTs by patterned sapphire substrate technology
Journal
Optics InfoBase Conference Papers
Date Issued
2021
Author(s)
Lee C.-C
Lee H.-J
Chan C.-T
CHIEH-HSIUNG KUAN
Abstract
A microstructure was designed to reduce the dislocations in the epitaxial GaN layer and improve electrical characteristics of HEMTs by using the patterned sapphire substrates technology. AlGaN/GaN HEMTs with the maximum drain current density increased from 308 mA/mm to 469 mA/mm were achieved. ? OSA 2021, ? 2021 The Author(s)
Subjects
Aluminum gallium nitride
Drain current
Epitaxial growth
III-V semiconductors
Sapphire
Substrates
AlGaN/GaN HEMTs
AlGaN/GaN-HEMT
Drain current density
Electrical characteristic
GaN epitaxial layers
GaN layers
Maximum drain current
Patterned sapphire substrate
Substrate technology
Gallium nitride
Type
conference paper