https://scholars.lib.ntu.edu.tw/handle/123456789/606990
標題: | Improvement of GaN epitaxial layer and AlGaN/GaN HEMTs by patterned sapphire substrate technology | 作者: | Lee C.-C Lee H.-J Chan C.-T CHIEH-HSIUNG KUAN |
關鍵字: | Aluminum gallium nitride;Drain current;Epitaxial growth;III-V semiconductors;Sapphire;Substrates;AlGaN/GaN HEMTs;AlGaN/GaN-HEMT;Drain current density;Electrical characteristic;GaN epitaxial layers;GaN layers;Maximum drain current;Patterned sapphire substrate;Substrate technology;Gallium nitride | 公開日期: | 2021 | 來源出版物: | Optics InfoBase Conference Papers | 摘要: | A microstructure was designed to reduce the dislocations in the epitaxial GaN layer and improve electrical characteristics of HEMTs by using the patterned sapphire substrates technology. AlGaN/GaN HEMTs with the maximum drain current density increased from 308 mA/mm to 469 mA/mm were achieved. ? OSA 2021, ? 2021 The Author(s) |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85119420682&partnerID=40&md5=bd617863b85f273bfb4f44955bd2e0f2 https://scholars.lib.ntu.edu.tw/handle/123456789/606990 |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。