Formation of quantum dots with post-growth thermal annealing of InGaN/GaN quantum wells
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
4913
Pages
103-106
Date Issued
2002
Author(s)
Lin, Y.-S.
Ma, K.-J.
Chung, Y.-Y.
Feng, S.-W.
Cheng, Y.-C.
Kuo, C.-T.
Tsang, J.-S.
Abstract
It is shown that post-growth thermal annealing of such a sample with temperature ranging from 800 to 900°C led to a better confinement of indium rich clusters near InGaN quantum well layers. Transmission electron microscopy (TEM) and energy filter TEM results manifested that the sizes of indium-rich QDs were reduced with increasing annealing temperature. Also, the size homogeneity was improved. Quasi-regular arrays of indium-rich QDs embedded in InGaN quantum wells were observed in the sample of 900°C annealing. X-ray diffraction also showed the enhancement of InN relative intensity. Photoluminescence measurements revealed blue shifts of photon emission spectral peak, indicating stronger quantum confinement after thermal annealing.
Subjects
InGaN/GaN quantum wells; Quantum dots; Thermal annealing; Transmission electron microscopy
SDGs
Other Subjects
Annealing; Gallium nitride; High temperature effects; Optical variables measurement; Photoluminescence; Photons; Semiconducting indium compounds; Semiconductor quantum wells; Transmission electron microscopy; X ray diffraction; Indium gallium nitride; Photoluminescence measurement; Thermal annealing; Semiconductor quantum dots
Type
conference paper