Publication: Lateral nonuniformity of the tunneling current of Al/SiO2/p-Si capacitor in inversion region due to edge fringing field effect
| cris.lastimport.scopus | 2025-05-05T21:38:35Z | |
| cris.virtual.department | Electrical Engineering | en_US |
| cris.virtual.department | Electronics Engineering | en_US |
| cris.virtual.orcid | 0000-0001-9688-0812 | en_US |
| cris.virtualsource.department | d18091e7-be53-4dda-8b3d-eb34dffdaaa8 | |
| cris.virtualsource.department | d18091e7-be53-4dda-8b3d-eb34dffdaaa8 | |
| cris.virtualsource.orcid | d18091e7-be53-4dda-8b3d-eb34dffdaaa8 | |
| dc.contributor.author | Lu, H.-W. | en_US |
| dc.contributor.author | Hwu, J.-G. | en_US |
| dc.contributor.author | JENN-GWO HWU | zz |
| dc.creator | Lu, H.-W.;Hwu, J.-G. | |
| dc.date.accessioned | 2018-09-10T09:44:19Z | |
| dc.date.available | 2018-09-10T09:44:19Z | |
| dc.date.issued | 2013 | |
| dc.identifier.doi | 10.1149/05807.0339ecst | |
| dc.identifier.uri | http://www.scopus.com/inward/record.url?eid=2-s2.0-84904885163&partnerID=MN8TOARS | |
| dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/378072 | |
| dc.language | en | en |
| dc.relation.ispartof | ECS Transactions | |
| dc.relation.journalissue | 7 | |
| dc.relation.journalvolume | 58 | |
| dc.relation.pages | 339-344 | |
| dc.source | AH | |
| dc.title | Lateral nonuniformity of the tunneling current of Al/SiO2/p-Si capacitor in inversion region due to edge fringing field effect | |
| dc.type | conference paper | |
| dspace.entity.type | Publication |