Integration of thin film transistor controlled carbon nanotubes for field emission devices
Journal
Electrochemical and Solid-State Letters
Journal Volume
4
Journal Issue
4
Pages
H5-H7
Date Issued
2001
Author(s)
Abstract
A new field emission device composed of carbon nanotubes and a thin film transistor (TFT) has been successfully demonstrated to significantly improve emission stability. Carbon nanotubes are directly integrated in the drain region of the TFT and the emission current from the carbon nanotubes is controlled via the TFT drain current. The fluctuation of the emission current of the TFT-controlled carbon nanotubes can be suppressed to less than 2%, below the fluctuation of uncontrolled carbon nanotubes. The novel field emission device exhibits low-voltage controllability, good emission stability, and structural simplicity, making it promising for application to future field-emission display.
Other Subjects
Anodes;Carbon nanotubes;Electric fields;Electric potential;Electron emission;Leakage currents;Scanning electron microscopy;Semiconductor device manufacture;Silica;Stability;Synthesis (chemical);Thin film transistors;Emission current;Field emission devices;Gate voltage;Field emission displays
Type
journal article