https://scholars.lib.ntu.edu.tw/handle/123456789/616421
標題: | Integration of thin film transistor controlled carbon nanotubes for field emission devices | 作者: | Cheng H.-C. Hong W.-K. Tarntair F.-G. Chen K.-J. Lin J.-B. Chen K.-H. Chen L.-C. LI-CHYONG CHEN |
公開日期: | 2001 | 卷: | 4 | 期: | 4 | 起(迄)頁: | H5-H7 | 來源出版物: | Electrochemical and Solid-State Letters | 摘要: | A new field emission device composed of carbon nanotubes and a thin film transistor (TFT) has been successfully demonstrated to significantly improve emission stability. Carbon nanotubes are directly integrated in the drain region of the TFT and the emission current from the carbon nanotubes is controlled via the TFT drain current. The fluctuation of the emission current of the TFT-controlled carbon nanotubes can be suppressed to less than 2%, below the fluctuation of uncontrolled carbon nanotubes. The novel field emission device exhibits low-voltage controllability, good emission stability, and structural simplicity, making it promising for application to future field-emission display. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035323474&doi=10.1149%2f1.1354497&partnerID=40&md5=afa09038854328b30cbd33826e823c54 https://scholars.lib.ntu.edu.tw/handle/123456789/616421 |
ISSN: | 10990062 | DOI: | 10.1149/1.1354497 | SDG/關鍵字: | Anodes;Carbon nanotubes;Electric fields;Electric potential;Electron emission;Leakage currents;Scanning electron microscopy;Semiconductor device manufacture;Silica;Stability;Synthesis (chemical);Thin film transistors;Emission current;Field emission devices;Gate voltage;Field emission displays |
顯示於: | 凝態科學研究中心 |
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